Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Linear temperature sensors in high-voltage GaN-HEMT power devices

: Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Wespel, M.; Meder, Dirk; Mikulla, Michael; Quay, Rüdiger; Ambacher, O.


APEC 2016, thirty first Annual IEEE Applied Power Electronics Conference and Exposition : March 20-24, 2016, Long Beach Convention Center - Long Beach, California
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-4673-9550-2 (electronic)
ISBN: 978-1-4673-8393-6 (print)
ISBN: 978-1-4673-8394-3 (USB)
ISBN: 978-1-4673-9551-9 (print)
Annual Applied Power Electronics Conference and Exposition (APEC) <31, 2016, Long Beach/Calif.>
Conference Paper
Fraunhofer IAF ()
thermal; overload; thermistor; HFET; PTC

This work presents a high-voltage GaN-based power HEMT with a highly-linear, monolithically-integrated temperature sensor. The principle is shown and compared to other concepts. The sensor is fabricated by using a interconnect metallization without additional process steps. The performance of the sensor as well as of the power device is characterized. The 600 V power device achieves an on-state resistance of RON = 55 mO at a corresponding drain current ID = 30 A and an advanced dynamic performance with a low gate charge of 20 nC.