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Optical static RAM cell using a monolithically integrated InP Flip-Flop and wavelength-encoded signals

: Pitris, S.; Vagionas, C.; Kanellos, G.T.; Kisacik, R.; Tekin, T.; Broeke, R.; Pleros, N.

Optical Society of America -OSA-, Washington/D.C.; IEEE Communications Society; IEEE Photonics Society:
Optical Fiber Communications Conference and Exhibition, OFC 2016 : 20-22 March 2016, Anaheim, California, United States
Washington, DC: OSA, 2016
ISBN: 978-1-943580-07-1
Paper Tu2K.7
Optical Fiber Communication Conference and Exposition (OFC) <2016, Anaheim/Calif.>
Conference Paper
Fraunhofer IZM ()

We experimentally demonstrate successful optical static RAM cell operation with READ/WRITE at 5Gbps and I/O wavelength diversity capabilities. The RAM cell incorporates an integrated SOA-MZI Access Gate and a monolithic InP Flip-Flop with coupled switches.