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Gold TSVs (Through Silicon Vias) for High-Frequency III-V Semiconductor Applications

 
: Kroehnert, K.; Glaw, V.; Engelmann, G.; Jordan, R.; Samulewicz, K.; Hauck, K.; Cronin, R.; Robertson, M.; Ehrmann, O.; Lang, K.-D.

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Institute of Electrical and Electronics Engineers -IEEE-; IEEE Components, Packaging, and Manufacturing Technology Society:
IEEE 66th Electronic Components and Technology Conference, ECTC 2016. Proceedings : 31 May-3 June 2016, Las Vegas, Nevada, USA
Los Alamitos, Calif.: IEEE Computer Society Conference Publishing Services (CPS), 2016
ISBN: 978-1-5090-1205-3 (Print)
ISBN: 978-1-5090-1204-6 (Online)
ISBN: 978-1-5090-1203-9
pp.82-87
Electronic Components and Technology Conference (ECTC) <66, 2016, Las Vegas/Nev.>
English
Conference Paper
Fraunhofer IZM ()

Abstract
The PARADIGM (Photonic Advanced ResearchAnd Development for Integrated Generic Manufacturing) European Union Project focuses on design and fabrication ofcomplex photonic integrated circuits (PICs) at low cost. A partof the project was to design a generic package for diverse PICs, and a co-planar waveguide with through silicon vias (TSV) wasa requirement therefor. The through silicon vias shouldimprove the high frequency performance of the waveguide dueto better distribution of the ground level over the wholedevice. As conduction material inside the TSVs copper is a well-known and commonly used material. However copperbeing a well-known source of degradation in III-Vsemiconductors a copper free metallization system had to bedeveloped. Gold is widely used in III-V devices to formcontacts and should therefore be used as conduction materialfor the TSVs and the contacts on top of the device. Ametallisation system based on gold was developed successfully.

: http://publica.fraunhofer.de/documents/N-422150.html