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  4. Interface characterization in B-based multilayer mirrors for next generation lithography
 
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2016
Journal Article
Title

Interface characterization in B-based multilayer mirrors for next generation lithography

Abstract
The interfaces in La/B4C and LaN/B4C multilayer mirrors designed for near normal incidence reflection of 6.x nm EUV light were investigated by grazing incidence X-ray reflectometry, high-resolution transmission electron microscopy and EUV reflectometry. The thickness and roughness asymmetries of the different interfaces in both studied systems have been identified. A development of interface roughness with an increasing number of bilayers was found by different investigation methods. For near normal incidence, R = 51.1% @ l = 6.65 nm could be reached with our La/B4C multilayer mirrors, whereas R = 58.1% was achieved with LaN/B4C multilayers at the same wavelength.
Author(s)
Naujok, P.
Yulin, S.
Müller, R.
Kaiser, N.
Tünnermann, A.
Journal
Thin solid films  
DOI
10.1016/j.tsf.2016.05.053
Language
English
Fraunhofer-Institut für Angewandte Optik und Feinmechanik IOF  
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