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Analysis of grain structure evolution based on optical measurements of mc Si wafers

: Strauch, T.; Demant, M.; Krenckel, P.; Riepe, S.; Rein, S.


Journal of Crystal Growth 454 (2016), pp.147-155
ISSN: 0022-0248
Journal Article
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Photovoltaik; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; Messtechnik und Produktionskontrolle; characterization; processing; silicon; growth

Grain structure and grain competition have a strong impact on bulk lifetime in multicrystalline (mc) silicon. A fast and thorough characterization of grain structure is crucial in order to improve industrial crystal growth. This work introduces key parameters of grain structure, extracted with a newly developed image processing tool. Four bricks grown with different concepts were chosen to investigate the value of the identified key parameters and to identify characteristic developments along the brick. Optical measurements on as-cut wafers from these bricks serve as a basis to extract grain structure properties, i.e., size, shape, homogeneity and distribution of grain size. By connecting the 2D-information over brick height, a statistical insight into the entire brick is gained. Weighted percentiles of grain area offer a robust measure to characterize grain size distribution. As twinning has a large impact on grain competition, twinned grains are detected via grain shape.