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Equipment simulation for studying the growth rate and its uniformity of oxide layers deposited by plasma-enhanced oxidation

 
: Baer, Eberhard; Niess, Juergen

:

Bär, E. ; Institute of Electrical and Electronics Engineers -IEEE-; Deutsche Forschungsgemeinschaft -DFG-, Bonn:
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016 : September 6-8, 2016, Nuremberg, Germany
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-5090-0818-6 (Online)
ISBN: 978-1-5090-0816-2 (CD-ROM)
ISBN: 978-1-5090-0819-3
ISBN: 978-1-5090-0817-9
pp.137-140
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) <2016, Nuremberg>
European Commission EC
FP7-ICT; 318458; SUPERTHEME
Circuit Stability Under Process Variability and\n Electro-Thermal-Mechanical Coupling
English
Conference Paper
Fraunhofer IISB ()
plasma oxidation; plasma reactor modeling; microwave plasma; oxidation rate uniformity

Abstract
We present for the first time an equipment simulation study for a reactor for plasma-enhanced oxidation powered by 10 individually tunable microwave sticks. The simulated dependence of the oxidation rate on the distance between the sticks and the wafer and the simulated across wafer uniformity well agree with measured data. The presented methodology allows one to study and optimize the process with respect to uniformity and growth rate for instance by adjusting the individual powers of the sticks or the geometrical configuration.

: http://publica.fraunhofer.de/documents/N-418963.html