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Investigation of barrier formation and stability of self-forming barriers with CuMn, CuTi and CuZr alloys

 
: Franz, M.; Ecke, R.; Kaufmann, C.; Kriz, J.; Schulz, S.E.

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Institute of Electrical and Electronics Engineers -IEEE-:
IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015 : 18-21 May 2015, Grenoble
Piscataway, NJ: IEEE, 2015
ISBN: 978-1-4673-7356-2
pp.95-97
International Interconnect Technology Conference (IITC) <2015, Grenoble>
Materials for Advanced Metallization Conference (MAM) <2015, Grenoble>
English
Conference Paper
Fraunhofer ENAS ()

Abstract
In this work, we present the recent work on self-forming barriers. Focus on investigation laid on the barrier formation and its stability against copper diffusion. The investigated alloys were Cu(Mn), Cu(Ti) and Cu(Zr) respectively. It can be shown that these alloys are capable to form an enrichment layer on the SiO2 interface. Here the substrate influences mainly the thickness of the generated barrier. Electrical measurements show the barrier stability against copper diffusion. Mn and Ti are promising elements as barrier materials.

: http://publica.fraunhofer.de/documents/N-417791.html