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Analysis and modeling of GaN-based multi field plate Schottky power diodes

: Weiss, B.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.


Institute of Electrical and Electronics Engineers -IEEE-; Norwegian University of Science and Technology -NTNU-, Trondheim:
IEEE 17th Workshop on Control and Modeling for Power Electronics, COMPEL 2016 : 27-30 June 2016, Trondheim, Norway
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-5090-1815-4
ISBN: 978-1-5090-1816-1
6 pp.
Workshop on Control and Modeling for Power Electronics (COMPEL) <17, 2016, Trondheim>
Conference Paper
Fraunhofer IAF ()
GaN; Schottky Diode; non-linear capacitance; model; multi field plate; reverse charge; c-v measurement

Lateral GaN-based Schottky diodes are promising for high-voltage, high frequency, low-loss power applications due to their low forward- and reverse charges resulting from the physical properties of the AlGaN/GaN-heterojunction. For GaN-Schottky diodes in the 600V/10A power range, reverse charges as low as 6nC can be achieved. The reverse current IRRM does not exceed 150mA at a switch-off slope of 25A/us and reverse voltage of 400V, for higher switching-speeds of 170A/us an IRRM of 510rmA is measured. This work focuses on compact modeling of non-linear capacitances of lateral, high-voltage Schottky diodes realized in a multi field plate design. All parameters for the model in forward and reverse direction are extracted from capacitance-voltage (C-V)- and IV-measurements presented in this work.