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La-doped ZrO2 based BEoL decoupling capacitors

: Weinreich, W.; Seidel, K.; Polakowski, P.; Drescher, M.; Gummenscheimer, A.; Nolan, M.G.; Cheng, L.; Triyoso, D.H.


Institute of Electrical and Electronics Engineers -IEEE-:
International Conference on IC Design and Technology, ICICDT 2016 : June 27th - 29th, 2016, Ho Chi Minh City, Vietnam
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-5090-0321-1 (Print)
ISBN: 978-1-5090-0827-8 (Online)
4 pp.
International Conference on IC Design and Technology (ICICDT) <2016, Ho Chi Minh City/Vietnam>
Conference Paper
Fraunhofer IPMS ()

Presented within this paper is a study on thin La-doped ZrO2 films used as dielectric material in decoupling capacitors in BEoL. The effect of combined atomic layer deposition processes and the integration concept of La are discussed with respect to capacitance density, leakage current, breakdown voltage and reliability. Physical characterization helps to understand the measured parameters. Overall, the La-doping is able to improve the breakdown voltage significantly without degrading reliability, but at the expense of increased capacitance density compared to undoped films.