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Extending the limits of screen-printed metallization of phosphorus- and boron-doped surfaces

: Werner, S.; Lohmüller, E.; Wolf, A.; Clement, F.


Solar energy materials and solar cells 158 (2016), Pt.1, pp.37-42
ISSN: 0927-0248
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <6, 2016, Chambéry>
Journal Article, Conference Paper
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Photovoltaik; Silicium-Photovoltaik; Pilotherstellung von industrienahen Solarzellen; solar cells; contact resistance; printing metallization; phosphorus; boron

This work demonstrates low-ohmic electrical contacting of phosphorus- and boron-doped surfaces (textured and passivated) with maximum dopant concentrations of only Nmax≈2·1019 cm−3 by screen-printed and fired metallization. The achieved results using commercially available metallization pastes allow for a substantial extension of the limits in which screen-printed and fired metallization can be applied for solar cell fabrication. Despite the very low Nmax, the investigations reveal reasonably low specific contact resistances of ρC=(8±3) mΩ cm2 for a silver paste on alkaline textured, phosphorus-doped, and SiNx passivated surfaces, and ρC=(3.7±0.7) mΩ cm2 for a silver aluminum paste on alkaline textured, boron-doped, and Al2O3/SiNx passivated surfaces.