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Investigation of 3-level-topology MNPC for aerospace applications with SiC-MOSFET-based power modules

: Schöner, C.; Hensel, A.; Zambrano Cambero, J.C.


Institution of Engineering and Technology -IET-:
8th IET International Conference on Power Electronics, Machines and Drives, PEMD 2016. Vol.1 : Glasgow, United Kingdom, 19-21 April 2016
Red Hook, NY: Curran, 2016 (IET conference publications 684)
ISBN: 978-1-5108-2566-6
ISBN: 978-1-78561-188-9
International Conference on Power Electronics, Machines and Drives (PEMD) <8, 2016, Glasgow>
Conference Paper
Fraunhofer ISE ()
Elektrische Energiesysteme; Energiesystemtechnik; Leistungselektronik; Silicon Carbide (SiC); application; Efficiency Power Electronics

In this paper the power losses of the 3-level-topology [ldquo ]Mixed Voltage Neutral Point Clamped (MNPC)[rdquo ], also referred to as [ldquo ]T-Type[rdquo ] topology, will be analysed with SiC-MOSFET-based power modules for a variable power factor with cos([phi ]) = 0...1ind. The advantages of the MNPC with Silicon Carbide (SiC) semiconductors have been demonstrated in previous studies with high efficient PV-inverters. As a result, the switching frequencies could be increased at equal high efficiency values reducing the size of the passive components, lowering the overall system costs and achieving higher power density. These advantages can be transferred to inverters for aerospace applications to displace heavy systems with lighter, more efficient and over the lifetime more profitable power electronic systems. In this work, an introduction to 3-level-topologies and the performance of new wide bandgap semiconductors compared to silicon semiconductors will be given in relation to the research initiative [ldquo ]More Electrical Aircraft (MEA)[rdquo ]. Then the basic functional principle in 2-quadrant-and 4-quadrant-operation-mode with two various switching strategies will be explained presenting the used PWM strategies. The results determined by numerical simulations and efficiency measurements under different conditions (output power, power factor, power modules and discrete devices) on real hardware will be shown, compared and verified.