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A millimeter-wave low-noise amplifier MMIC with integrated power detector and gain control functionality

: Tessmann, A.; Leuther, A.; Massler, H.; Wagner, S.; Thome, F.; Schlechtweg, M.; Ambacher, O.


Lin, J. (Ed.) ; Institute of Electrical and Electronics Engineers -IEEE-:
IEEE MTT-S International Microwave Symposium, IMS 2016 : 22- 27 May 2016, San Francisco, California, USA
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-5090-0698-4
ISBN: 978-1-5090-0699-1
3 pp.
International Microwave Symposium (IMS) <2016, San Francisco/Calif.>
Conference Paper
Fraunhofer IAF ()
detector diode; grounded coplanar waveguide (GCPW); low-noise amplifier (LNA); metamorphic high electron mobility transistor (mHEMT); millimeter-wave monolithic integrated circuit (MMIC); variable gain amplifier (VGA)

A compact E-band amplifier circuit has been developed for use in ultra-high capacity point-to-point communication links. The millimeter-wave monolithic integrated circuit (MMIC) consists of a two-stage low-noise amplifier (LNA), a 10 dB line coupler, an integrated detector diode and a single-stage variable gain amplifier (VGA). The multifunctional MMIC was realized by using a 50 nm InAlAs/InGaAs based metamorphic high electron mobility transistor (mHEMT) technology in combination with grounded coplanar waveguide topology (GCPW) and cascode transistors, thus leading to a very low noise figure in combination with high gain and large operational bandwidth at millimeter-wave frequencies. The fabricated LNA circuit achieved a maximum gain of 37 dB at 78 GHz and more than 34 dB in the frequency range from 69 to 98 GHz. Furthermore, a room temperature (T = 293 K) noise figure of 2.3 dB and a detector responsivity of 39.000 V/W have been obtained at the frequency of operation.