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A 40 dBm AlGaN/GaN HEMT power amplifier MMIC for SatCom applications at K-Band

: Friesicke, C.; Feuerschütz, P.; Quay, R.; Ambacher, O.; Jacob, A.F.


Lin, J. (Ed.) ; Institute of Electrical and Electronics Engineers -IEEE-:
IEEE MTT-S International Microwave Symposium, IMS 2016 : 22- 27 May 2016, San Francisco, California, USA
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-5090-0698-4
ISBN: 978-1-5090-0699-1
4 pp.
International Microwave Symposium (IMS) <2016, San Francisco/Calif.>
Conference Paper
Fraunhofer IAF ()
gallium nitride; high power amplifiers; K-band; MMIC´s; satellite communication

The design, realization, and characterization of a K-band high power amplifier with a saturated output power of 40dBm is described in this paper. The amplifier is realized using a 250nm gate length AlGaN/GaN HEMT MMIC technology on semi-insulating SiC substrates. The two-stage amplifier is designed with two 6x290um HEMT cells in the driver and four 8x100um HEMT cells in the final stage and thus exhibits a relatively aggressive staging ratio of 1:3. When measured with a supply voltage of 32V, the amplifier delivers a saturated output power of 40dBm at 18 GHz. The peak PAE at this frequency is 30%, and the linear gain exceeds 20 dB. These results are state-of-the-art performance with regard to power/efficiency at K-band.