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A W-band wireless communication transmitter utilizing a stacked-FET oscillator for high output power performance

: Thome, F.; Ambacher, O.


Lin, J. (Ed.) ; Institute of Electrical and Electronics Engineers -IEEE-:
IEEE MTT-S International Microwave Symposium, IMS 2016 : 22- 27 May 2016, San Francisco, California, USA
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-5090-0698-4
ISBN: 978-1-5090-0699-1
4 pp.
International Microwave Symposium (IMS) <2016, San Francisco/Calif.>
Conference Paper
Fraunhofer IAF ()
amplitude modulator; amplitude shift keying; HEMTs; low power electronics; MMIC´s; oscillator; SPST switch; stacked-FET; transmitter; W-band

This paper reports on an efficient transmitter monolithic microwave integrated circuit (TX MMIC) suitable for high-speed wireless communication. In order to achieve high output power, the TX is based on a direct modulation approach, containing a stacked-FET voltage-controlled oscillator (VCO) and an amplitude modulator. Thus, the modulation scheme is based on amplitude-shift keying (ASK). The MMIC utilizes the Fraunhofer IAF 50nm gate-length metamorphic high-electronmobility transistor (mHEMT) technology. The stacked-FET oscillator generates the carrier signal and achieves an output power of about 14 dBm. The carrier frequency can be tuned from 87.8 to 98.2 GHz. Due to the FET-stacking approach the amplitude modulator can be simplified to a single-pole, single-throw (SPST) switch. Hence, the transmitter MMIC achieves a peak output power of 12:5dBm and a maximum data rate of 18 Gbit/s. The maximum continuous wave (CW) efficiency of the entire TX MMIC yields 17.6 %.