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Low noise amplifiers for MetOp-SG

: Rösch, M.; Tessmann, A.; Leuther, A.; Weber, R.; Moschetti, G.; Aja, B.; Kotiranta, M.; Massler, H.; Kangas, V.; Perichaud, M.-G.; Schlechtweg, M.; Ambacher, O.


Institute of Electrical and Electronics Engineers -IEEE-; European Space Agency -ESA-, Paris:
9th Global Symposium on Millimeter-Waves (GSMM 2016) & 7th ESA Workshop on Millimetre-Wave Technology and Applications : 6-8 June 2016, Espoo, Finland
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-5090-1349-4 (Print)
ISBN: 978-1-5090-1348-7 (Online)
Global Symposium on Millimeter Waves (GSMM) <9, 2016, Espoo>
Workshop on Millimetre-Wave Technology and Applications <7, 2016, Espoo>
Conference Paper
Fraunhofer IAF ()
low noise amplifier (LNA); metamorphic high electron mobility transistor (mHEMT); monolithic microwave integrated circuit (MMIC)

We present low-noise amplifiers (LNA) that have been developed in the framework of two pre-qualification ESA projects for frequencies between 54 and 229 GHz for the METOP-SG satellite program. The main goal of these satellites is to provide data for operational weather forecast and climate change. Specifically temperature and water vapor measurements can be only achieved by advancing the current state of the art for the metamorphic high electron mobility transistor (mHEMT) technology. The MMIC amplifiers are based on the In0.52Al0.48As/In0.8Ga0.2As/In0.53Ga0.47As heterostructure and utilize transistors with a gate length of 50 nm. On-wafer measurements will be presented for all frequency bands as well as results of packaged LNAs.