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Advanced building blocks for (sub-)millimeter-wave applications in space, communication, and sensing using III/V mHEMT technology

: Schlechtweg, M.; Tessmann, A.; Leuther, A.; Massler, H.; Moschetti, G.; Rösch, M.; Weber, R.; Hurm, V.; Kuri, M.; Zink, M.; Riessle, M.; Rosenzweig, J.; Ambacher, O.


Institute of Electrical and Electronics Engineers -IEEE-; European Space Agency -ESA-, Paris:
9th Global Symposium on Millimeter-Waves (GSMM 2016) & 7th ESA Workshop on Millimetre-Wave Technology and Applications : 6-8 June 2016, Espoo, Finland
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-5090-1349-4 (Print)
ISBN: 978-1-5090-1348-7 (Online)
Global Symposium on Millimeter Waves (GSMM) <9, 2016, Espoo>
Workshop on Millimetre-Wave Technology and Applications <7, 2016, Espoo>
Conference Paper
Fraunhofer IAF ()
metamorphic high electron mobility transistor (mHEMT); millimeter-wave monolithic integrated circuit (MMIC); submillimeter-wave monolithic integrated circuit (S-MMIC); low-noise amplifier (LNA)

Millimeter- and submillimeter-wave integrated circuits (MMICs and S-MMICs) and modules developed at the Fraunhofer IAF for manifold applications in the frequency range up to 700 GHz are presented. These circuits use the advanced metamorphic high electron mobility transistor (mHEMT) technology based on the InAlAs/InGaAs material system on 4” GaAs substrates. The presented circuits are key components in wireless communication systems, sensor systems, as well as radio astronomic receivers.