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Photoconductive antennas based on low temperature grown GaAs on silicon substrates for broadband terahertz generation and detection

 
: Klos, M.; Bartholdt, R.; Klier, J.; Lampin, J.-F.; Beigang, R.

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Institute of Electrical and Electronics Engineers -IEEE-:
40th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2015. Vol.2 : Hong Kong, China, 23 - 28 August 2015
Piscataway, NJ: IEEE, 2015
ISBN: 978-1-4799-8273-8
ISBN: 978-1-4799-8272-1
pp.552
International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) <40, 2015, Hong Kong>
English
Conference Paper
Fraunhofer IPM ()

Abstract
We present investigations of photoconductive antennas (PCA) based on low temperature grown GaAs (LT GaAs) on silicon substrates for terahertz (THz) detection and generation. The PCAs consist of 2 mu m thick layers of LT GaAs bonded on a high resistivity silicon substrate in order to reduce the intrinsic absorption losses around 8 THz due to a strong phonon resonance in GaAs. Using 20 fs long pump pulses around 800 nm and dipole antennas with dipole length between 20 mu m and 60 mu m a maximum bandwidth above 10 THz and a maximum dynamic range exceeding 90 dB at 0.5 THz were obtained. The average output power was measured with a calibrated detector to be 5 mu W at a repetition rate of 80 MHz.

: http://publica.fraunhofer.de/documents/N-404633.html