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Methods for resistivity and thickness measurements of high resistivity interfacial layers in photovoltaic TCO multilayers

: Kaufmann, K.; Naumann, V.; Großer, S.; Hagendorf, C.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Photonics Society:
IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 : 14-19 June 2015, New Orleans, LA
Piscataway, NJ: IEEE, 2015
ISBN: 978-1-4799-7944-8
Photovoltaic Specialists Conference (PVSC) <42, 2015, New Orleans/La.>
Conference Paper
Fraunhofer CSP ()

Transparent conductive oxide (TCO) layers for high-efficiency thin-film photovoltaic modules consist of several layers with different thickness and electric resistivity. In particular SnO2-based TCOs consist of a conductive indium tin oxide (ITO) base layer and a thin, highly resistive interfacial layer. These interfacial layers are crucial for the performance of the solar cells due to their impact on series resistance and band gap matching. Process-induced degradation may additionally change the structural and electric properties of the highly resistive interfacial layer between absorber material and ITO. This paper presents a method to measure the resistivity of the highly resistive interfacial layer by a modified transfer-length measurement (TLM) together with depth profiling and cross sectional thickness measurements with nm accuracy.