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Determination of Fowler-Nordheim tunneling parameters in Metal-Oxide-Semiconductor structure including oxide field correction using a vertical optimization method

 
: Toumi, S.; Ouennoughi, Z.; Strenger, K.C.; Frey, L.

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Solid-State Electronics 122 (2016), pp.56-63
ISSN: 0038-1101
English
Journal Article
Fraunhofer IISB ()

Abstract
Current conduction mechanisms through a Metal–Oxide–Semiconductor structure are characterized via Fowler–Nordheim (FN) plots. The extraction of the FN parameters like the electron/hole effective mass in oxide mox and in semiconductor msc, the barrier height at the semiconductor–oxide interface ϕB, and the correction oxide voltage Vcorr for a MOS structure is made using a vertical optimization process on the current density without any assumption about ϕB or mox. An excellent agreement is obtained between the FN plots calculated with the FN parameters extracted using a vertical optimization process with the experimental one.

: http://publica.fraunhofer.de/documents/N-404184.html