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Enhanced pressure response in ZnO nanorods due to spontaneous polarization charge

 
: Seifikar, M.; O'Reilly, E.P.; Christian, B.; Lebedev, V.; Volk, J.; Erdélyi, R.; Lukács, I.E.; Dauksevicious, R.; Gaidys, R.

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Institute of Electrical and Electronics Engineers -IEEE-:
IEEE 15th International Conference on Nanotechnology, NANO 2015. Proceedings : 27-30 July 2015, Rome, Italy
Piscataway, NJ: IEEE, 2015
ISBN: 978-1-4673-8156-7
ISBN: 978-1-4673-8157-4
ISBN: 978-1-4673-8155-0
pp.1465-1468
International Conference on Nanotechnology (NANO) <15, 2015, Rome>
English
Conference Paper
Fraunhofer IAF ()
semiconductor; modeling; ZnO; nanowires; piezoelectricity; spontaneous polarization

Abstract
We present measurements of the induced charge flow when a compressive force is applied by contacting to a ZnO nanowire (NW). The measured charge transfer from the NW is over 104 times larger than expected from the strain-induced piezoelectric response, and is comparable in magnitude to the spontaneous polarization charge, associated with an ideal ZnO NW. A model is presented that compares the total energy of an isolated NW and external capacitor with the total energy when the capacitor and NW form a closed circuit. The analysis shows that it is possible, for realistic values of surface defect creation energy, to have spontaneous polarization charge transferred from a NW to an external capacitor when a circuit is completed between them. We propose that it is possible to use spontaneous polarization charge to get a significantly enhanced response in ZnO-based NW pressure sensors.

: http://publica.fraunhofer.de/documents/N-404069.html