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W-Band HEMT-Oscillator MMICs Using Subharmonic Injection Locking

W-Band HEMT Oszillator MMICs mit subharmonischer Injektionsstabilisierung
: Kudszus, S.; Berceli, T.; Tessmann, A.; Neumann, M.; Haydl, W.


IEEE transactions on microwave theory and techniques 48 (2000), No.12, pp.2526-2532
ISSN: 0018-9480
Journal Article
Fraunhofer IAF ()
HEMT; MMIC; oscillator; Oszillator; subharmonic injection locking; subharmonische Synchronisation; W-band

The efficient stabilization of high electron mobility transistor (HEMT) oscillator monolithic microwave integrated circuits (MMICs) for W-band applications, using a new approach of high-order subharmonic injection locking, is presented. Transmission- and reflection-type injection locking techniques are applied to stabilize 94-GHz oscillators based on GaAs pseudomorphic-HEMT technology. A voltage-controlled oscillator MMIC was developed, consisting of the oscillator circuit and an integrated harmonic generator, that can be stabilized by injection power levels of -45 dBm at 94 GHz using reflection-type injection locking, a lowing reference frequencies as low as the fifteenth to twenty-subharmonic as the input for the harmonic generator. Additionally, an injection-locked phase-locked loop (PLL) was developed, which enhances the locking range from 30 MHz to 1 GHz, using the twenty-first subharmonic as a reference signal. The combination of simple synchronization to a low-frequency reference signal and the control of the synchronization in the injection-locked PLL allows the generation of stable and low-noise millimeter-wave signals with a fully integrated MMIC source.