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Excitonic photoluminescence quenching by impact ionization of excitons and donors in GaAs/Al(0.35)Ga(0.65)As quantum wells with an in-plane electric field

Unterdrücken der exzitionischen Phozolumineszenz durch Strophionisation von Exzitonen und Donatoren in GaAs/Al(0.35)Ga(0.65)As Quantenfilmen in enem elektrischen Feldparallel zum Quantenfilm
 
: Kundrotas, J.; Valusis, G.; Cesna, A.; Kundrotaite, A.; Dargys, A.; Suziedelis, A.; Gradauskas, J.; Asmontas, S.; Köhler, K.

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Physical Review. B 62 (2000), No.23, pp.15871-15878
ISSN: 0163-1829
ISSN: 1098-0121
ISSN: 0556-2805
English
Journal Article
Fraunhofer IAF ()
III-V Halbleiter; III-V semiconductor; superlattice; Übergitter; timeresolved measurement; zeitaufgelöste Messung; optical measurement; optische Messung

Abstract
We present a detailed experimental study on photoluminescence quenching due to exciton and donor impact ionization by accelerated electrons under an in-plane nanosecond duration electric field created in GaAs/Al(0.35)Ga(0.65)As quantum wells. From the photoluminescence transients measured by the time-correlated single-photon counting technique, we have determined the experimental conditions under which donor impact ionization can have an influence on quenching of the excitonic photoluminescence. The coefficient of twodimensional exciton impact ionization has been estimated; its dependences on the applied electric field, lattice temperature, and width of the quantum wells are given.

: http://publica.fraunhofer.de/documents/N-4031.html