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Influence of Electric Field on Photoluminescence Quenching in GaAs/AlGaAs Quantum Wells

Einfluss eines elektrischen Feldes auf die Unterdrückung der Photolumineszenz in GaAs/AlGaAs Quantenfilmen

: Asmontas, S.; Cesna, A.; Gradauskas, J.; Köhler, K.; Kundrotaite, A.; Kundrotas, J.; Suziedelis, A.; Valusis, G.

	Asmontas, S.: Ultrafast Phenomena in Semiconductors. Proceedings of the 10th International Symposium Semiconductors (10-UFPS) Uetikon-Zürich: Trans Tech Publications, 1999 (Materials Science Forum 297/298) ISBN: 0-87849-824-9 pp.253-256
	International Symposium on Ultrafast Phenomena in Semiconductors (UFPS) <10, 1998, Vilnius>

	English
	Conference Paper
	Fraunhofer IAF ()
	III-V semiconductor; III-V Halbleiter; superlattice; Übergitter; time resolved measurement; zeitaufgelöste Messung; optical measurement; optische Messung

Abstract
We present experimental study of the influence of an electric field applied inparallel to the layers of GaAs/Al(0.35)Ga(0.65)As quantum wells on the photoluminescence at liquid nitrogen temperature, It is determined that the photoluminescence is quenched due to impact ionization of excitons. Main regularities of given processes are studied for different quantum wells at different illumination intensities.

: http://publica.fraunhofer.de/documents/N-4029.html