1999
Conference Paper
Title

Influence of Electric Field on Photoluminescence Quenching in GaAs/AlGaAs Quantum Wells

Other Title
Einfluss eines elektrischen Feldes auf die Unterdrückung der Photolumineszenz in GaAs/AlGaAs Quantenfilmen
Abstract
We present experimental study of the influence of an electric field applied inparallel to the layers of GaAs/Al(0.35)Ga(0.65)As quantum wells on the photoluminescence at liquid nitrogen temperature, It is determined that the photoluminescence is quenched due to impact ionization of excitons. Main regularities of given processes are studied for different quantum wells at different illumination intensities.
Author(s)
Asmontas, S.
Cesna, A.
Gradauskas, J.
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Kundrotaite, A.
Kundrotas, J.
Suziedelis, A.
Valusis, G.
Mainwork
Conference
Language
English
Keyword(s)