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56 Gb/s L-band InGaAlAs ridge waveguide electroabsorption modulated laser with integrated SOA

: Theurer, M.; Przyrembel, G.; Sigmund, A.; Molzow, W.D.; Troppenz, U.; Möhrle, M.


Physica status solidi. A 213 (2016), No.4, pp.970-974
ISSN: 0031-8965
ISSN: 1862-6300
ISSN: 1521-396X
ISSN: 1862-6319
Journal Article
Fraunhofer HHI ()

We demonstrate an L-band InGaAlAs based electroabsorption modulated DFB laser integrated with a semiconductor optical amplifier. The device can be operated with up to 56 Gb s−1 with low chirp and high output power. The device is realized with one common InGaAlAs multi quantum well structure for low fabrication costs and high yield. We describe important aspects of the device structure and present a DC and RF characterization. For the experimental characterization the focus lies on the influence of the integrated semiconductor optical amplifier (SOA) on the device performance.