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A fast development simulation algorithm for discrete resist models

: Schnattinger, T.; Bär, E.; Erdmann, A.


Loeschner, H.:
31st International Conference on Micro- and Nano-Engineering 2005. Proceedings : 19 - 22 September 2005, Vienna, Austria
Amsterdam: Elsevier, 2006 (Microelectronic engineering 83.2006,4/9)
International Conference on Micro- and Nano-Engineering (MNE) <31, 2005, Vienna>
Conference Paper, Journal Article
Fraunhofer IISB ()
resist development; molecular simulation; critical ionization model; efficiency; numerical accuracy

With shrinking feature sizes in lithography, molecular level phenomena such as line edge roughness have an increasingly important impact on process performance. The critical ionization model provides a molecular understanding of the resist development process that follows the exposure and post exposure bake steps. Applied to simulation, a major drawback of the critical ionization model is the vast increase in computing time required. This paper presents a fast, event-based algorithm with self-adaptive time-steps for the discrete simulation of the development process. Its additional advantage compared to previously employed time-step based algorithms is that it is free of numerical errors that result from the discretization of the simulated development time into fixed time-steps.