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Design and technology of vertical-cavity surface-emitting lasers with nonconducting epitaxial mirrors

: Maleev, N.A.; Kovsh, A.P.; Zhukov, A.E.; Vasilev, A.P.; Mikhrin, S.S.; Kuzmenkov, A.G.; Bedarev, D.A.; Zadiranov, Y.M.; Kulagina, M.M.; Shernyakov, Y.M.; Shulenkov, A.S.; Bykovskii, V.A.; Solovev, Y.M.; Möller, C.; Ledentsov, N.N.; Ustinov, V.M.


Semiconductors 37 (2003), No.10, pp.1234-1238
ISSN: 0038-5700
ISSN: 1063-7826
Journal Article
Fraunhofer HHI ()

Design and technology problems in the fabrication of vertical-cavity surface-emitting lasers (VCSELs) equipped with nonconducting distributed Bragg reflectors (DBRs) and fabricated using molecular-beam epitaxy are considered. VCSELs with an active region were formed on the basis of InGaAs quantum wells and incorporated an AlGaAs/GaAs bottom DBR and an oxidized AlGaO/GaAs top DBR; the diameter of the oxidized aperture was equal to 7-12 µm. The devices exhibit a continuous-wave lasing at room temperature with threshold currents of 0.5-1.5 mA, a differential efficiency as high as 0.5 mW/mA, and a highest output power of 3 mW.