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InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 mu m wavelength range

: Maleev, N.A.; Krestnikov, I.L.; Kovsh, A.R.; Sakharov, A.V.; Ustinov, V.M.; Mikhrin, S.S.; Passenberg, W.; Pawlowski, E.; Moller, C.; Tsatsulnikov, A.F.; Kunzel, H.; Ledentsov, N.N.; Alferov, Z.I.; Bimberg, D.


Physica status solidi. B 224 (2001), No.3, pp.803-806
ISSN: 0031-8957
ISSN: 0370-1972
Journal Article
Fraunhofer HHI ()

AlGaAs/GaAs microcavity structures with InAs/InGaAs quantum dot (QD) active regions were grown by molecular beam epitaxy (MBE) on GaAs substrates and their optical characteristics were studied. Methods for the optimization of optical emission properties of the InAs/lnGaAs QDs and accurate calibration of the proper layer thickness are discussed. Microcavity light-emitting diodes (MC-LEDs) with a QB active region demonstrate narrow electroluminescence (EL) spectra (FWHM < 15 nm) accompanied by an output beam divergence of only 17 degrees. The MC-LED emission wavelength can be controllably changed by varying the QD material composition in combination with tuning the optical microcavity.