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Metastable defects in proton implanted and annealed silicon

 
: Jelinek, Moriz; Laven, Johannes G.; Ganagona, Naveen Goud; Job, Reinhart; Schustereder, Werner; Schulze, Hans-Joachim; Rommel, Mathias; Frey, Lothar

:

Pichler, Peter (Hrsg.):
Gettering and defect engineering in semiconductor technology XVI : Selected, peer reviewed papers from the GADEST 2015: Gettering and Defect Engineering in Semiconductor Technology, September 20-25, 2015, Bad Staffelstein, Germany
Dürnten: Trans Tech Publications, 2016 (Diffusion and defect data. B, Solid state phenomena 242)
ISBN: 978-3-03835-608-0
ISBN: 978-3-0357-0083-1
DOI: 10.4028/www.scientific.net/SSP.242
pp.169-174
International Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST) <16, 2015, Bad Staffelstein>
English
Conference Paper
Fraunhofer IISB ()
crystalline silicon; proton implantation; metastable defects

Abstract
Two metastable defects with energy levels at Ec-0.28eV and Ec-0.37eV, which previously have been reported in proton implanted- and in proton implanted and annealed crystalline silicon are discussed. Recent results on the peculiar behavior of these defects upon periodical application of two different bias conditions during DLTS measurement are reviewed. Two specifically designed DLTS measurement sequences are proposed in order to further reveal the defects transformation rates and respective activation energies.

: http://publica.fraunhofer.de/documents/N-389458.html