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Ferroelectric hafnium oxide: A game changer to FRAM?

: Müller, J.; Polakowski, P.; Riedel, S.; Mueller, S.; Yurchuk, E.; Mikolajick, T.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014 : Jeju, South Korea, 27 - 29 October 2014
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-4201-5
ISBN: 978-1-4799-4203-9
Annual Non-Volatile Memory Technology Symposium (NVMTS) <14, 2014, Jeju>
Conference Paper
Fraunhofer IPMS ()

In this paper the potential of hafnium oxide as a CMOS-compatible ferroelectric for future memory applications is assessed. The high coercive field strength of ferroelectric hafnium oxide is identified as a key parameter being crucial to device performance. It provides the unique thickness and lateral scaling potential of this novel ferroelectric, while at the same time compromises its endurance properties due to large switching fields. Considering the ambivalent nature of this parameter as well as the emerging trade-off between retention and endurance, voltage controlled operation modes and different device concepts for ferroelectric hafnium oxide are discussed.