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Application-specific optimization of optical sensors based on single-photon avalanche diodes

 
: Schwinger, Alexander; Bechen, Benjamin; Nitta, Christian; Hosticka, Bedrich J.; Kokozinski, Rainer

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Institute of Electrical and Electronics Engineers -IEEE-:
11th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2015 : Glasgow, United Kingdom, 29 June-2 July 2015
Piscataway, NJ: IEEE, 2015
ISBN: 978-1-4799-8230-1
ISBN: 978-1-4799-8229-5
pp.306-309
Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) <11, 2015, Glasgow>
English
Conference Paper
Fraunhofer IMS ()
single-photon avalanche diode (SPAD); silicon photomultiplier (SiPM); time gating

Abstract
In recent years, various developments have advanced the field of optical sensors based on single-photon avalanche diodes. In this contribution we present two sensors that were designed in 0.35μm CMOS technology. A silicon photomultiplier achieves a fill factor of 68 % at 50 μm pixel pitch and allows improved functionality by cointegration of application-specific readout electronics. A time-gated line sensor with gating times down to 1.5ns and serial digital output was designed based on optimized pixel geometry suitable for spectroscopy applications. Planned further improvements of sensors based on single-photon avalanche diode technology, including on-chip temperature compensation, are presented.

: http://publica.fraunhofer.de/documents/N-383141.html