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Thermal laser separation - a novel dicing technology fulfilling the demands of volume manufacturing of 4H-SiC devices

 
: Lewke, D.; Dohnke, K.O.; Zühlke, H.U.; Cerezuela Barret, M.; Schellenberger, M.; Bauer, A.; Ryssel, H.

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Chaussende, D.; Ferro, G.:
Silicon Carbide and Related Materials 2014 : Selected, peer reviewed papers from the 10th European Conference on Silicon Carbide and Related Materials, (ECSCRM 2014), 21-25 September, 2014, Grenoble, France
Dürnten: Trans Tech Publications, 2015 (Materials Science Forum 821-823)
ISBN: 978-3-03835-478-9
ISBN: 978-3-03826-943-4
pp.528-532
European Conference on Silicon Carbide and Related Materials (ECSCRM) <10, 2014, Grenoble>
English
Conference Paper
Fraunhofer IISB ()

Abstract
One challenge for volume manufacturing of 4H-SiC devices is the state-of-the-art wafer dicing technology - the mechanical blade dicing which suffers from high tool wear and low feed rates. In this paper we discuss Thermal Laser Separation (TLS) as a novel dicing technology for large scale production of SiC devices. We compare the latest TLS experimental data resulting from fully processed 4H-SiC wafers with results obtained by mechanical dicing technology. Especially typical product relevant features like process control monitoring (PCM) structures and backside metallization, quality of diced SiC-devices as well as productivity are considered. It could be shown that with feed rates up to two orders of magnitude higher than state-of-the-art, no tool wear and high quality of diced chips, TLS has a very promising potential to fulfill the demands of volume manufacturing of 4H-SiC devices.

: http://publica.fraunhofer.de/documents/N-383138.html