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Temperature dependent characterization of bipolar injection field-effect-transistors (BiFET) for determining the short-circuit-capability

 
: Hürner, A.; Erlbacher, T.; Mitlehner, H.; Bauer, A.J.; Frey, L.

:

Chaussende, D.; Ferro, G.:
Silicon Carbide and Related Materials 2014 : Selected, peer reviewed papers from the 10th European Conference on Silicon Carbide and Related Materials, (ECSCRM 2014), 21-25 September, 2014, Grenoble, France
Dürnten: Trans Tech Publications, 2015 (Materials Science Forum 821-823)
ISBN: 978-3-03835-478-9
ISBN: 978-3-03826-943-4
pp.806-809
European Conference on Silicon Carbide and Related Materials (ECSCRM) <10, 2014, Grenoble>
English
Conference Paper
Fraunhofer IISB ()

Abstract
In this study, the electrical performance of Bipolar-Injection Field-Effect-Transistors (BiFET) in dependence on the junction temperature is presented for the first time. Based on these results, the short circuit capability of the BiFET is discussed. Thereby, the saturation current is estimated to be approximately 150mA at 300K and it increases by a factor of 5 by rising the temperature up to 450K as analyzed in this study. Furthermore, the reduction of the gate-voltage window of the BiFET at elevated temperatures is comparable to unipolar JFETs, and indicates a very good controllability over a wide temperature range. Finally, numerical simulations demonstrate the potential to improve the electrical performance of the BiFET drastically by adjusting the doping concentration in the control region and increasing the ambipolar lifetime in the p-doped drift layer without influencing the dependency on the junction temperature.

: http://publica.fraunhofer.de/documents/N-383136.html