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Comparison of continuous and transition mode in a PV-booster with GaN-transistors and switching frequencies up to 250 kHz

: Derix, D.; Freiche, R.; Schöner, C.; Hensel, A.


Institute of Electrical and Electronics Engineers -IEEE-:
17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015. Vol.1 : 8-10 September 2015, Geneva, Switzerland
Piscataway, NJ: IEEE, 2015
ISBN: 978-1-4799-8277-6
European Conference on Power Electronics and Applications (EPE) <17, 2015, Geneva>
Energy Conversion Congress and Exposition (ECCE) <2015, Geneva>
Conference Paper
Fraunhofer ISE ()

A 1.8 kW boost converter for a PV-inverter with a switching frequency up to 250 kHz is analyzed. The boost converter consists of two parallel legs and the hardware is built so that chokes and semiconductors can be exchanged easily. Two different operating modes, the Continuous Induction Current Mode (CICM) with a fixed switching frequency of f S = 250 kHz and the Transition Mode (TM) with a variable switching frequency are compared. The basic operation principles are explained and efficiency measurements on real hardware under different conditions (output power, semiconductors (GaN/Si)) are shown. An improved version of the Transition Mode is developed which leads to higher efficiencies. Exceptional efficiencies of eta max, CICM = 98.2 % in CICM at f S = 250 kHz and eta max, eTM = 98.7 % in enhanced TM are obtained.