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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten. # Modeling of dispersive millimeter-wave GaN HEMT devices for high power amplifier design

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Fulltext urn:nbn:de:0011-n-3829731 (10 MByte PDF) MD5 Fingerprint: 62ff05e94ad489a240e1f6b8788d87eb Created on: 6.4.2016 |

**Abstract**

In recent years, monolithic integrated power amplifiers based on gallium nitride (GaN) have become an ideal candidate to meet the increasing demand for high solid-state power levels of today's and future millimeter-wave (mm-wave) systems. The heterostructure aluminum gallium nitride/gallium nitride (AlGaN/GaN) high electron mobility transistor devices outperform comparable state-of-the-art semiconductor technologies due to their superior fundamental properties regarding high-power and high-frequency applications. Therefore, a 100 nm AlGaN/GaN technology was developed by the Fraunhofer IAF which is intended for the realization of high-frequency transistors as well as high-power amplifiers for mm-wave frequency applications. The computer-aided design of such power amplifiers requires a scalable nonlinear model of the active transistor devices. Thereby, the nonlinear model must be capable to take low-frequency dispersion and memory effects into account, which are present in the considered mm-wave GaN technology. An elegant way to describe such dispersive devices is a state-space modeling approach. Therefore, this thesis addresses the development of a scalable state-space transistor model and its verification and applicability in terms of the design of two power amplifiers, a broadband and a high-power amplifier.