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Precise parameterization of the recombination velocity at passivated phosphorus doped surfaces

: Kimmerle, A.; Rahman, M.M.; Werner, S.; Mack, S.; Wolf, A.; Richter, A.; Haug, H.


Journal of applied physics 119 (2016), No.2, Art. 025706, 8 pp.
ISSN: 0021-8979
ISSN: 1089-7550
Bundesministerium für Umwelt, Naturschutz, Bau und Reaktorsicherheit BMUB
Journal Article
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; diffusion; Emitter; passivation; recombination

We investigate the surface recombination velocity Sp at the silicon-dielectric interface of phosphorus-doped surfaces for two industrially relevant passivation schemes for crystalline silicon solar cells. A broad range of surface dopant concentrations together with a high accuracy of evaluating the latter is achieved by incremental back-etching of the surface. The analysis of lifetime measurements and the simulation of the surface recombination consistently apply a set of well accepted models, namely, the Auger recombination by Richter et al. [Phys. Rev. B 86, 1-14 (2012)], the carrier mobility by Klaassen [Solid-State Electron. 35, 953-959 (1992); 35, 961-967 (1992)], the intrinsic carrier concentration for undoped silicon by Altermatt et al. [J. Appl. Phys. 93, 1598-1604 (2003)], and the band-gap narrowing by Schenk [J. Appl. Phys. 84, 3684-3695 (1998)]. The results show an increased Sp at textured in respect to planar surfaces. The obtained parameterizations are applicable in modern simulation tools such as EDNA [K. R. McIntosh and P. P. Altermatt, in Proceedings of the 35th IEEE Photovoltaic Specialists Conference, Honolulu, Hawaii, USA (2010), pp. 1-6], PC1Dmod [Haug et al., Sol. Energy Mater. Sol. Cells 131, 30-36 (2014)], and Sentaurus Device [Synopsys, Sentaurus TCAD, Zurich, Switzerland] as well as in the analytical solution under the assumption of local charge neutrality by Cuevas et al. [IEEE Trans. Electron Devices 40, 1181-1183 (1993)].