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Performance and parasitic analysis of sub-micron scaled tri-gate AlGaN/GaN HEMT design

: Ture, E.; Brückner, P.; Raay, F. van; Quay, R.; Ambacher, O.; Alsharef, M.; Granzner, R.; Schwierz, F.


Institute of Electrical and Electronics Engineers -IEEE-:
10th European Microwave Integrated Circuits Conference, EuMIC 2015. Proceedings : EuMW 2015, European Microwave Week, 7-8 September 2015, Paris, France
Piscataway, NJ: IEEE, 2015
ISBN: 978-2-87487-040-8
ISBN: 978-2-87487-038-5
European Microwave Integrated Circuits Conference (EuMIC) <10, 2015, Paris>
European Microwave Week (EuMW) <18, 2015, Paris>
Conference Paper
Fraunhofer IAF ()
gallium compounds; millimeter wave transistors; semiconductor devices; gallium nitride; HEMT

AlGaN/GaN high-electron mobility transistors (HEMTs) with varied Tri-gate topologies have been fabricated and influences of the fin-shaped nano-channels on device parasitics are examined. Through S-parameter measurements and modelling of the designed Fin-FETs, a detailed RF investigation on intrinsic device parameters is performed under different biasing schemes. Corresponding RF performances and transfer characteristics as well as the derived small-signal parameters of the measured devices are extracted by employing 3-D EM FET model analysis at 110 GHz. Comparisons between the designed fin-geometries and intrinsic device parameters have proven flatter gm, gds and fT responses, which are presented through experimental results in detail for the first time.