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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Using SiC MOSFET's full potential - Swichting faster than 200 kV/µs

 
: Kreutzer, O.; Heckel, T.; März, M.

:

Roccaforte, F.:
Silicon Carbide and Related Materials 2015 : Selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy
Dürnten: Trans Tech Publications, 2016 (Materials Science Forum 858)
ISBN: 978-3-0357-1042-7 (Print)
ISBN: 978-3-0357-2042-6 (CD-ROM)
ISBN: 978-3-0357-3042-5 (eBook)
pp.880-884
International Conference on Silicon Carbide and Related Materials (ICSCRM) <16, 2015, Giardini Naxos>
English
Conference Paper
Fraunhofer IISB ()

: http://publica.fraunhofer.de/documents/N-379680.html