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Metamorphic HEMT 0.5 mum low cost high performance process on 4'' GaAs substrates

: Benkhelifa, F.; Chertouk, M.; Walther, M.; Lösch, R.; Weimann, G.


IEEE Electron Devices Society:
International Conference on Indium Phosphide and Related Materials 2000. Conference proceedings : 14 - 18 May 2000, Williamsburg Marriott, Williamsburg, Virginia, USA
Piscataway, NJ: IEEE, 2000
ISBN: 0-7803-6320-5
ISBN: 0-7803-6321-3
ISBN: 0-7803-6322-1
International Conference on Indium Phosphide and Related Materials (IPRM) <12, 2000, Williamsburg/Va.>
Conference Paper
Fraunhofer IAF ()

Fabrication, performance and uniformity of 0.5 m gate length, passivated InAlAs/InGaAs metamorphic HEMTs (MHEMT) on 4 inch GaAs substrates are reported. Excellent uniformity of DC and HF characteristics across 4 inches wafers was achieved. An fT of 53 GHz and an fmax of 200 GHz was obtained for 0.5 m gate length devices. The standard deviation of the threshold voltage is 23 to 35 mV from wafer to wafer. These results demonstrate the potential of a low cost technology to fabricate MHEMTs on 4 inches GaAs substrates using i-line steppers to manufacture in production volumes.