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Electrical characterization of the slow boron oxygen defect component in Czochralski silicon

: Niewelt, T.; Schön, J.; Broisch, J.; Warta, W.; Schubert, M.C.


Physica status solidi. Rapid research letters 9 (2015), No.12, pp.692-696
ISSN: 1862-6254
ISSN: 1862-6270
Journal Article
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; oxygen defect; degradation; silicon; parameterization

We investigated the light-induced degradation of compensated Czochralski grown n-type silicon and found a fast-forming and a slow-forming component similar to p-type silicon. A study by means of extended lifetime spectroscopy shows that the "slow" defect introduces two recombination-active energy levels in the silicon band gap. One level resembles the literature data from p-type silicon of a donor-like level at Et1 = ECB – (0.41 ± 0.02 eV). The second level is found at Et2 = EVB + (0.26 ± 0.02 eV) and exhibits a strong acceptor-like capture asymmetry. The two-level parameterization constitutes a unified model for the description of the injection dependent lifetime on both p- and n-type silicon and is physically more plausible than previous ones featuring multiple independent centers. A comparison to literature data demonstrates the improved description quality achieved with the new parameterization.