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The influence of target temperature and photon assistance on the radiation sefect formation in low-fluence ion-implanted silicon
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2001
Journal Article
Titel
The influence of target temperature and photon assistance on the radiation sefect formation in low-fluence ion-implanted silicon
Author(s)
Barabanenkov, M.Y.
Gyulai, J.
Leonov, A.V.
Mordkovich, V.N.
Omelyanovskaya, N.M.
Ryssel, H.
Zeitschrift
Nuclear instruments and methods in physics research, Section B. Beam interactions with materials and atoms
DOI
10.1016/S0168-583X(00)00585-1
Language
English
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Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB