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A high-power Ka-band single-pole single-throw switch MMIC using 0.25 µm GaN on SiC

: Kaleem, S.; Kühn, J.; Quay, R.; Hein, M.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE Radio and Wireless Symposium, RWS 2015. Proceedings : 25-28 January 2015; San Diego, California
Piscataway, NJ: IEEE, 2015
ISBN: 978-1-4799-5507-7
ISBN: 978-1-4799-5506-0
ISBN: 978-1-4799-5505-3
Radio and Wireless Symposium (RWS) <2015, San Diego/Calif.>
Conference Paper
Fraunhofer IAF ()
gallium nitride; HEMT; Ka-Band; microwave switches; MMIC

A single-pole single-throw switch monolithic microwave integrated circuit using 0.25 µm GaN HEMT technology is presented for Ka-band downlink frequencies 17 - 22 GHz. On-wafer small-signal measurements demonstrated a low insertion loss of <=1 dB, a high on-to-off isolation of >=28 dB and a switch figure-of-merit R(on)C(off) of 330 fs. Large-signal measurements at 20GHz revealed input compression points `P(-1dB)' of 40dBm and 36dBm in the transmit (V(c) = -20 V) and isolation (V(c) = 0) states, respectively. The low insertion loss, high isolation, high power handling, and negligible static power consumption in compact dimensions of 1.75mm × 1.75mm form a baseline for an advanced design of a reconfigurable switch matrix based on GaN passive-HEMT.