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Homoepitaxial growth of single crystalline CVD-diamond

: Widmann, C.J.; Müller-Sebert, W.; Lang, N.; Nebel, C.E.


Diamond and Related Materials 64 (2016), pp.1-7
ISSN: 0925-9635
Journal Article
Fraunhofer IAF ()
Homoepitaxial diamond growth; (100)-oriented seeds; microwave assisted chemical vapor deposition; Alpha parameter

The influence of temperature, pressure and holder geometry on the homoepitaxial single crystalline diamond growth in a microwave-assisted chemical vapor deposition reactor will be introduced and discussed in detail. Optimized diamond growth conditions were determined for homoepitaxy on (100)-oriented high-temperature high-pressure (HPHT) seed crystals using Raman scattering and confocal-micro-photoluminescence spectroscopy measurements.