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Investigation of rapid thermal annealed pn-junctions in SiC

 
: Rambach, M.; Weiss, R.; Frey, L.; Bauer, A.J.; Ryssel, H.

Madar, R.:
Silicon carbide and related materials 2003 : ICSCRM 2003 ; proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5 - 10, 2003
Uetikon-Zuerich: Trans Tech Publications, 2004 (Materials Science Forum 457/460)
ISBN: 0-87849-943-1
pp.1073-1076
International Conference on Silicon Carbide and Related Materials (ICSCRM) <10, 2003, Lyon>
English
Conference Paper
Fraunhofer IISB ()

Abstract
Rapid thermal annealing (RTA) of 4H-silicon carbide (SiC) is investigated for the activation of Al implanted layers. The lowest sheet resistances achieved for an Al doping of 1(.)10(15)cm(-2) were about 60kOmega/rectangle for an annealing time of 300s at a temperature of 1700degreesC. Additionally, atomic force measurements (AFM) show smooth surfaces. The root mean square (rms) roughness remains below 1 nm for doping concentrations up to 1(.)10(14)cm(-2). pn-diode test structures were fabricated with different edge terminations and were electrically characterized. With an implant dose of 2(.)10(13)cm(-2) for edge termination, breakdown voltages higher than 1500V were achieved.

: http://publica.fraunhofer.de/documents/N-37634.html