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Lensless proximity EUV lithography with a Xenon gas discharge plasma radiation

: Kim, H.; Danylyuk, S.; Brose, S.; Loosen, P.; Bergmann, K.; Brocklesby, W.S.; Juschkin, L.


Rocca, J.; Menoni, C.; Marconi, M.:
X-Ray Lasers 2014 : Proceedings of the 14th International Conference on X-Ray Lasers, 26-30 May 2014, Fort Collins, Colo.
Cham: Springer International Publishing, 2016 (Springer Proceedings in Physics 169)
ISBN: 978-3-319-19520-9 (print)
ISBN: 978-3-319-19521-6 (online)
International Conference on X-Ray Lasers <14, 2014, Fort Collins/Colo.>
Conference Paper
Fraunhofer ILT ()

The possibilities and limitations of proximity and interference lithography under extreme ultraviolet (EUV) radiation are explored. Utilizing partially coherent EUV radiation at central wavelength of 10.9 nm from a Xe gas discharge plasma source, it is shown that proximity printing in the Fresnel diffraction regime can produce the high-resolution features even with low-resolution masks, and also yield sub-30 nm edge resolution in the resist. The scalability limit within non-paraxial case has been also studied. The effect of the diffraction behind the transmission mask is evaluated with respect to the achievable resolution. The finite-difference time-domain simulation of the diffraction patterns behind the Ni/Nb-based transmission mask is performed varying the pitch size. The results demonstrate that the method can be used to produce patterns with resolution down to 7.5 nm half-pitch with 2:1 mask demagnification utilizing achromatic Talbot effect with transverse electric (TE)-polarized light.