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Diffusion barrier stability against Cu diffusion under the influence of heavy Cu wire bonding

 
: Gross, David; Haag, S.; Schneider-Ramelow, M.; Lang, K.-D.

Fraunhofer-Institute for Electronic Nano Systems -ENAS-, Chemnitz; Fraunhofer-Institut für Zuverlässigkeit und Mikrointegration -IZM-, Berlin:
Smart Systems Integration 2015 : 9th International Conference and Exhibition on Integration Issues of Miniaturized Systems - MEMS, NEMS, ICs and Electronic Components, Copenhagen, Denmark, 11 - 12 March 2015
Aachen: Apprimus-Verlag, 2015
ISBN: 978-3-86359-296-7
pp.32-39
Smart Systems Integration Conference (SSI) <2015, Copenhagen>
International Conference & Exhibition on Integration Issues of Miniaturized Systems - MEMS, NEMS, ICs and Electronic Components <9, 2015, Copenhagen>
English
Conference Paper
Fraunhofer IZM ()

Abstract
Heavy Cu wire-bonding is one of the key elements for a future increase of the high-temperature reliability of power modules. Si power devices with thick Cu metallizations of 10 μm and above get in the focus of the semiconductor industry as enabling technology for heavy Cu wire-bonding. In this context, the stability of Ti-N and Ta-N diffusion barriers against Cu diffusion and the influence of the bonding process on the metallization integrity on Si diodes is discussed.

: http://publica.fraunhofer.de/documents/N-374737.html