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Correlation between chip metallization properties and the mechanical stability of heavy Cu wire bonds

 
: Gross, David; Haag, S.; Reinold, M.; Schneider-Ramelow, M.; Lang, K.-D.

MESAGO PCIM GmbH, Stuttgart:
PCIM Europe 2015. CD-ROM : International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, 19 – 21 May 2015; Proceedings
Berlin: VDE Verlag, 2015
ISBN: 978-3-8007-3924-0
pp.1081-1085
International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management <2015, Nuremberg>
English
Conference Paper
Fraunhofer IZM ()

Abstract
Ultrasonic wire-bonding with 300 μm thick Cu wires is carried out on different Cu bond pads on both Si and thermally oxidized Si chips. The hardness of the Cu metallization and the adhesion strength on the substrates is related to the bonding performance and shear test results. Annealing of the chips prior to the bonding process is carried out at different temperatures which significantly reduces the bond pad hardness. Electron-backscatter diffraction results show the corresponding high deformation of Cu pads annealed at 400 °C due to the bonding process.

: http://publica.fraunhofer.de/documents/N-374735.html