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Switching frequency modulation for GaN-based power converters

 
: Weiss, B.; Reiner, R.; Quay, R.; Waltereit, P.; Mikulla, M.; Schlechtweg, M.; Ambacher, O.

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Institute of Electrical and Electronics Engineers -IEEE-; IEEE Power Electronics Society:
ECCE 2015, IEEE Energy Conversion Congress & Exposition. Proceedings : September 20-24, 2015, Montreal, Canada
Piscataway, NJ: IEEE, 2015
ISBN: 978-1-4673-7150-6
ISBN: 978-1-4673-7151-3
pp.4361-4366
Energy Conversion Congress and Exposition (ECCE) <7, 2015, Montreal>
English
Conference Paper
Fraunhofer IAF ()
fast switching devices; EMI; GaN HEMT; power conversion; switching frequency modulation

Abstract
The effects on the EMI spectrum for various switching frequency modulation (SFM) scenarios in a high frequency boost converter are investigated in this paper. A GaNdevice and a Si-device are compared with respect to their EMI behavior, which results from different gate charges and therefore different voltage gradients dv/dt on the power lines. First, the dynamic characteristics of the GaN-HEMT are demonstrated in detail. Then the behavior in the time domain and the frequency domain for switching operations at 300 kHz with various frequency modulation settings and an output power of 250 W are presented.

: http://publica.fraunhofer.de/documents/N-374671.html