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Vertical buffer leakage and temperature effects on the breakdown performance of GaN/AlGaN HEMTs on Si substrate

: Benkhelifa, F.; Müller, S.; Polyakov, V.M.; Breuer, S.; Czap, H.; Manz, C.; Mikulla, M.; Ambacher, O.


Shenai, K. ; Electrochemical Society -ECS-:
GaN & SiC Power Technologies 5 : 228th ECS Meeting, October 11, 2015 - October 15, 2015, Phoenix, AZ
Pennington, NJ: ECS, 2015 (ECS transactions 69.2015, Nr.11)
Symposium on GaN & SiC Power Technologies <5, 2015, Phoenix/Ariz.>
Electrochemical Society (ECS Meeting) <228, 2015, Phoenix/Ariz.>
Conference Paper
Fraunhofer IAF ()
bias voltage; carbon; drain current; electric breakdown; gallium nitride; heterojunction bipolar transistor; high electron mobility transistor; leakage currents; silicon carbide

The epitaxial growth of a GaN/AlGaN HEMTs epi-structure based on a carbon doped superlattice buffer has been optimized for achieving a highly isolated buffer, and transistors with high breakdown voltages and low leakage currents. The 10 mm gate periphery normally-on HEMTs demonstrate a drain-source leakage current lower than 0.4 µA/mm at 600 V drain bias. Furthermore, the breakdown voltage performance of the HEMT is not altered at 600 V bias when the measurement is performed with the substrate being grounded. The isolation blocking voltage of the epi-structure reaches 840 V for a corresponding leakage current density of 10 µA/mm2. We highlight low buffer vertical isolation degradation at high temperature (150°C) and that the decrease in HEMT's breakdown voltage performance is not due to the vertical buffer leakage when increasing the substrate temperature.