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Influence of heteroepitaxy on the width and frequency of the e-2 (high)-phonon line in GaN studied by Raman-spectroscopy

 

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Journal of applied physics 89 (2001), No.7, pp.3634-3641
ISSN: 0021-8979
ISSN: 1089-7550
English
Journal Article
Fraunhofer IAF ()

: http://publica.fraunhofer.de/documents/N-36947.html