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Atomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices

 
: Beltran, A.M.; Duguay, S.; Strenger, C.; Bauer, A.J.; Cristiano, F.; Schamm-Chardon, S.

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Solid State Communications 221 (2015), pp.28-32
ISSN: 0038-1098
Bundesministerium für Bildung und Forschung BMBF
01SF0804
English
Journal Article
Fraunhofer IISB ()

Abstract
The breakthrough of 4H-SiC MOSFETs is stemmed mainly due to the mobility degradation in their channel in spite of the good physical intrinsic material properties. Here, two different n-channel 4H-SiC MOSFETs are characterized in order to analyze the elemental composition at the SiC/SiO2 interface and its relationship to their electrical properties. Elemental distribution analyses performed by EELS reveal the existence of a transition layer between the SiC and the SiO2 regions of the same width for both MOSFETs despite a factor of nearly two between their electron mobility. Additional 3D compositional mapping by atom probe tomography corroborates these results, particularly the absence of an anomalous carbon distribution around the SiC/SiO2 interface.

: http://publica.fraunhofer.de/documents/N-369407.html